november 7ê13 ?2 011 fairchil d s e micond uctor cor pora t io n fdmc767 8 rev. c2 www.fairchildsemi.com 1 FDMC7678 n-channel power trench ? mosfet FDMC7678 n-channel power trench ? mosfet 30 v, 19.5 a, 5.3 m features ? max r ds(on) = 5.3 m at v gs = 10 v, i d = 17.5 a ? max r ds(on) = 6.8 m at v gs = 4.5 v, i d = 15.0 a ? high performance technology for extremely low r ds(on) ? termination is lead-free and rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced power trench ? process that has been especially tailored to mini mize the on-state resistance. this device is well suited for power management and load switching applications common in notebook computers and portable battery packs. application ? dc - dc buck converters ? notebook battery power management ? load switch in notebook g s s s d d d d 5 6 7 8 3 2 1 4 1 2 3 4 5 dd d d g s s s bottom to p mlp 3.3x 3.3 6 7 8 pin 1 mosfet maximum ratings t a = 25 c unless other wise note d thermal characteristics package marking and ordering information symb ol param e ter r atin gs un it s v ds drain to sour ce v olt age 30 v v gs g a t e t o s o u r c e v o l t a g e ( n o t e 3 ) 2 0 v i d drain cur r ent -continuous (packam limited) t c = 25 c 19 .5 a drain cur r ent -continuous (silicon limited) t c = 25 c 63 -c ontinuous t a = 25 c ( n ote 1a) 17 .5 -pulse d 70 e as s i n g l e p u l s e av a l a n c h e e n e r g y ( n o t e 4 ) 5 4 m j p d power d i ssip ation t c = 25 c 31 w p o w e r d i s s i p a t i o n t a = 2 5 c ( n o t e 1 a ) 2 . 3 t j , t stg ope r ating and s t orage junction t emperatur e range -5 5 to +150 c r jc thermal r esist ance, jun c tion to ca se 4.0 c/w r ja t h e r m a l r e s i s t a n c e , j u n c t i o n t o a m b i e n t ( n o t e 1 a ) 5 3 device marking d e vice p acka ge reel size t ape wid t h q uan t it y f d mc7678 f d mc767 8 m lp 3.3x3 . 3 13 ? ? 12 mm 3000 un it s http://
www.fairchildsemi.com 2 ?2 011 fairchil d s e micond uctor cor pora t io n fdmc767 8 rev. c2 FDMC7678 n-channel power trench ? mosfet electrical characteristics t j = 25 c unless ot herwise noted of f ch ara c t e rist ic s on chara c t e rist ics dy namic char act erist i cs sw it ch i n g c h ara c t e ris t i c s dr ain-sou r ce diode cha r ac ter i s t ics sy mb o l pa ra me t e r t e s t co nd i t i o ns mi n t y p ma x u ni t s bv ds s drain to sour ce br eakd o wn v o lt a g e i d = 250 a, v gs = 0 v 3 0 v bv dss t j b r eakdown v o lt age t e mperatur e coef ficie n t i d = 250 a, r eferenced to 25 c 21 mv/c i dss zero gate v o lt age d r ain curr ent v ds = 24 v, v gs = 0 v 1 a i gss gate t o source leakage cur r ent, forw ard v gs = 20 v, v ds = 0 v 1 0 0 n a v gs( t h) gate t o source thr e shold v o lt age v gs = v ds , i d = 250 a 1 .2 1.5 3 .0 v v gs(th) t j gate t o source thr e shold v o lt age t emper ature coef ficient i d = 250 a, refe renced to 25 c - 5 mv/c r ds( on) s t atic drain to sour ce on re sist ance v gs = 10 v , i d = 17.5 a 4.2 5 .3 m v gs = 4.5 v , i d = 15.0 a 5.1 6 .8 v gs = 10 v , i d = 17.5 a t j = 125 c 5.7 7 .2 g fs forw ard t r ansconduct ance v dd = 5 v , i d = 1 7 .5 a 9 0 s c iss input cap a cit ance v ds = 1 5 v, v gs = 0 v f = 1mhz 1810 2410 pf c oss outpu t cap acit ance 620 820 pf c rs s reve rse t r ansfe r cap a cit ance 75 1 1 0 p f r g gate r e sist ance 0.7 2 .5 t d( o n) t u rn -o n del a y t i me v dd = 15 v , i d = 17.5 a v gs = 10 v, r gen = 6 10 19 ns t r rise t i me 41 0 n s t d( o f f) t u rn -of f d e lay t i me 26 41 ns t f fal l t i me 31 0 n s q g( t o t ) t o t a l gate cha r ge v gs = 0 v to 1 0 v v dd = 1 5 v i d = 17.5 a 28 39 nc t o t a l gate cha r ge v gs = 0 v to 4 . 5 v 1 4 1 9 n c q gs gate t o source char ge 4.4 nc q gd gate t o drain ?miller ? cha r ge 3.9 n c v sd s o urce to dr ain d i ode forw ard v o lt age v gs = 0 v , i s = 1. 9 a (n ote 2 ) 0.7 1 .2 v v gs = 0 v, i s = 17.5 a ( n ote 2 ) 0.8 1 .2 t rr reve rse recover y t i me i f = 17.5 a, d i /dt = 100 a/ s 3 0 49 ns q rr reve rse recover y charge 1 3 23 nc notes : 1. r ja i s d et er m i n ed w i t h th e dev ice m o unt ed on a 1 i n 2 pa d 2 oz cop p e r pa d on a 1 . 5 x 1 . 5 i n . b oar d o f fr - 4 m a te ri a l . r jc i s gu ar an tee d by de sig n w h i l e r ca is de term in ed b y th e u ser's b oar d de sig n . 2 . pu l se te st: p u l se wi dt h < 3 00 s, d u ty cycle < 2.0 %. 3 . as an n-ch de vice, the ne ga tive v gs r a ting is fo r l o w d u ty cycle pu lse o ccuren ce o n ly. n o con t inu o u s rating is implied . 4. e as of 54 mj is bas ed on star ti ng t j = 25 o c, l = 0 . 3 mh , i as = 19 a, v dd = 27 v, v gs = 1 0 v . a. 53 c/w when mounted on a 1 i n 2 p a d o f 2 o z c o p p e r b.1 2 5 c/w when m o u n te d o n a mi nim u m p a d of 2 o z c o pp er
www.fairchildsemi.com 3 ?2 011 fairchil d s e micond uctor cor pora t io n fdmc767 8 rev. c2 FDMC7678 n-channel power trench ? mosfet typical characteristics t j = 25c unless otherwise noted fig u re 1 . 0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 50 60 70 v gs = 3 v v gs = 3.5 v v gs = 4. 5 v pulse duration = 80 s duty cycle = 0.5% max v gs = 6 v v gs = 10 v i d , d rain cur ren t (a ) v ds , d ra i n t o s o ur ce vol t a g e ( v ) on region characteristics figure 2. 0 10203040506070 0 1 2 3 4 v gs = 3 v v gs = 6 v pulse duration = 80 s du t y cy c l e = 0 . 5 % m a x normalized drain to source on-resistance i d , d ra i n cu rr e nt ( a ) v gs = 3.5 v v gs = 4.5 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 i d = 17 . 5 a v gs = 10 v normalized drain to source on-resistance t j , j unc t i o n t e m p e ra t ure ( o c ) vs junction temperature figure 4. 24681 0 2 4 6 8 10 12 t j = 125 o c i d = 17.5 a t j = 2 5 o c v gs , g a t e t o so u r c e vo l t a g e (v) r ds(on) , drain to source on-resistance ( m ) pulse duration = 80 s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1.0 1 .5 2.0 2 .5 3.0 3 .5 0 10 20 30 40 50 60 70 t j = 150 o c v ds = 5 v pulse duration = 80 s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , g a t e t o s o u r c e v o l t a g e (v ) fi gu re 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 1 0. 1 1 10 10 0 t j = -55 o c t j = 25 o c t j = 15 0 o c v gs = 0 v i s , reverse drain current (a) v sd , body di ode forwa r d vo lt a ge ( v ) s o u r c e t o d r a i n d i o d e forward voltage vs source current
www.fairchildsemi.com 4 ?2 011 fairchil d s e micond uctor cor pora t io n fdmc767 8 rev. c2 FDMC7678 n-channel power trench ? mosfet fi gu re 7. 0 5 10 15 20 25 30 0 2 4 6 8 10 i d = 17. 5 a v dd = 20 v v dd = 10 v v gs , gate to source voltage (v) q g , ga t e cha rge ( nc) v dd = 15 v gate charge characteristics figure 8. 0.1 1 10 30 30 10 0 10 00 30 00 f = 1 m h z v gs = 0 v capacitance (pf) v ds , dr a i n t o s o ur ce volt a g e ( v ) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage fi gu re 9. 0.001 0.01 0.1 1 10 100 1 10 30 t j = 100 o c t j = 25 o c t j = 125 o c t av , t i m e i n av al an c h e ( m s ) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 10 20 30 40 50 60 70 limited by package v gs = 4.5 v r jc = 4.0 o c/w v gs = 10 v i d , drain current (a) t c , c a s e t em per a t u r e ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op era t in g are a 0 . 01 0 . 1 1 10 100200 0. 0 1 0.1 1 10 10 0 100 s 10 ms 10 s 100 ms dc 1 s 1 m s i d , drain current (a) v ds , dr a i n t o s o u rc e v o l t a g e ( v ) t h i s a r e a is limited by r ds(on) si n g l e pu ls e t j = m a x r a t e d r ja = 1 2 5 o c/ w t a = 25 o c figure 12. 10 -4 10 -3 10 -2 10 -1 11 0 10 0 1000 0. 5 1 10 10 0 10 00 20 00 si n g le pu ls e r ja = 12 5 o c/ w t a = 2 5 o c p ( pk ) , peak transient power (w) t , p ul se w i dt h ( s e c ) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted
www.fairchildsemi.com 5 ?2 011 fairchil d s e micond uctor cor pora t io n fdmc767 8 rev. c2 FDMC7678 n-channel power trencmÚ? mosfet figure 13. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0 . 000 5 0.00 1 0.0 1 0. 1 1 2 d = 0. 5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 si ngl e pul se r ja = 1 25 o c/ w dut y cy c l e - de sce n di ng order normalized thermal impedance, z ja t , r e ct a ngu l a r p uls e dur a t i o n ( s e c ) p dm t 1 t 2 notes : duty f act o r : d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a typical characteristics t j = 25c unless otherwise noted
www.fairchildsemi.com 6 ?2 011 fairchil d s e micond uctor cor pora t io n fdmc767 8 rev. c2 FDMC7678 n-channel power trench ? mosfet dime nsio nal ou tlin e and pad layout b top view 0.10 c 0.10 c 2x 2x pin1 ident a ? ? keep out area (3.40) 2.37 0.45(4x) (1.70) 2.15 (0.65) 0.42(8x) 0.70(4x) 0.65 1.95 (0.40) 4 1 8 5 notes: a.except as noted, package conforms to jedec registration mo-240 variation ba.. b.dimensions are in millimeters. c.dimensions and tolerances per asme y14.5m,1994. d.seating plane is defined by terminal tips only e.body dimensions do not include mold flash protrusions nor gateburrs. f.flange dimensions include interterminal flash or protrusion. interterminal flash or protrusion shall not exceed 0.25mm per side. g.it is recommended to have no traces or via within the keep out area. h.drawing filename: mkt-mlp08trev3. i.general radii for all corners shall be 0.20mm max. j.fairchild semiconductor. 0.10 c a b 0.05 c bottom view 0.08 c 0.05 0.00 side view seating plane 0.10 c (0.20) 8 5 1.95 0.65 0.32 + 0.05 4 1 (8x) 2.27 + 0.05 0.45 + 0.05 (4x) (1.20) 0.45 + 0.05 (3x) 2.05 + 0.05 (0.40) ? 0 $ ; c 0.8max recommended land pattern a a
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